Datasheet > IRFBE30S_V01

IRFBE30S_V01

更新时间： 2024-09-14 02:52:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	511K
描述
Power MOSFET

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IRFBE30S_V01 数据手册

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L

Vishay Siliconix

Power MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

800

_DS(on)()

V_GS= 10 V

3.0

Q_g(Max.) (nC)

9.6

• Repetitive Avalanche Rated

• Fast Switching

_gs(nC)

_gd(nC)

• Ease of Paralleling

Configuration

Single

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

D²PAK

I²PAK

(TO-263)

(TO-262)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

N-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHFBE30S-GE3

IRFBE30SPbF

SiHFBE30S-E3

D²PAK (TO-263)

I²PAK (TO-262)

SiHFBE30L-GE3

IRFBE30LPbF

SiHFBE30L-E3

Lead (Pb)-free and Halogen-free

SiHFBE30STRL-GE3^a

IRFBE30STRLPbF^a

SiHFBE30STL-E3^a

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

800

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

4.1

2.6

Continuous Drain Current

V_GSat 10 V

I_D

_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.0

260

4.1

W/°C

Single Pulse Avalanche Energy^b

Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

E_AR

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

_C= 25 °C

P_D

125

2.0

dV/dt

T_J, T_stg

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

°C

for 10 s

300^d

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 29 mH, R_g= 25 , I_AS= 4.1 A (see fig. 12).

c. I_SD 4.1 A, dI/dt  100 A/μs, V_DD 600 V, T_J 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91119

S11-1053-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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与IRFBE30S_V01相关器件

型号	品牌	获取价格	描述	数据表
IRFBE30SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFBE30SPBF	VISHAY	获取价格	Power MOSFET
IRFBE30STRLPBF	VISHAY	获取价格	Power MOSFET
IRFBE30STRLPBFA	VISHAY	获取价格	Power MOSFET
IRFBE30STRR	VISHAY	获取价格	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRFBE30STRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRFBE32	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 3.2A I(D) \| TO-220AB
IRFBF20	INFINEON	获取价格	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
IRFBF20	VISHAY	获取价格	Power MOSFET
IRFBF20-002	VISHAY	获取价格	Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal

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