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BUK456-800A PDF预览

BUK456-800A

更新时间: 2024-11-22 22:19:59
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
7页 65K
描述
PowerMOS transistor

BUK456-800A 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.28
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (ID):4 A最大漏源导通电阻:3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):50 pF
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:125 W最大脉冲漏极电流 (IDM):16 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):210 ns最大开启时间(吨):65 ns
Base Number Matches:1

BUK456-800A 数据手册

 浏览型号BUK456-800A的Datasheet PDF文件第2页浏览型号BUK456-800A的Datasheet PDF文件第3页浏览型号BUK456-800A的Datasheet PDF文件第4页浏览型号BUK456-800A的Datasheet PDF文件第5页浏览型号BUK456-800A的Datasheet PDF文件第6页浏览型号BUK456-800A的Datasheet PDF文件第7页 
Philips Semiconductors  
Product Specification  
PowerMOS transistor  
BUK456-800A/B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a  
plastic envelope.  
The device is intended for use in  
Switched Mode Power Supplies  
(SMPS), motor control, welding,  
DC/DC and AC/DC converters, and  
in general purpose switching  
applications.  
SYMBOL  
PARAMETER  
MAX.  
MAX.  
UNIT  
BUK456  
-800A  
800  
4
125  
3
-800B  
800  
3.5  
125  
4
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Drain-source on-state  
resistance  
V
A
W
Ptot  
RDS(ON)  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
tab  
gate  
2
drain  
g
3
source  
tab drain  
1 2 3  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
Drain-source voltage  
-
-
-
-
800  
800  
30  
V
V
V
Drain-gate voltage  
RGS = 20 kΩ  
Gate-source voltage  
-
-800A  
4.0  
-800B  
ID  
Drain current (DC)  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
-
-
-
3.5  
2.2  
14  
A
A
A
ID  
Drain current (DC)  
2.5  
IDM  
Drain current (pulse peak value)  
16  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction Temperature  
Tmb = 25 ˚C  
-
-
-
- 55  
-
125  
150  
150  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to  
-
-
-
1.0  
-
K/W  
K/W  
mounting base  
Thermal resistance junction to  
ambient  
60  
May 1995  
1
Rev 1.200  

BUK456-800A 替代型号

型号 品牌 替代类型 描述 数据表
BUZ81 INFINEON

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