Datasheet > BUK464-60H

BUK464-60H

更新时间： 2024-11-22 22:50:23

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
7页	57K
描述
PowerMOS transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BUK464-60H 数据手册

Philips Semiconductors

Product specification

PowerMOS transistor

BUK464-60H

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

field-effect power transistor in a

plastic envelope suitable for surface

mount applications.

The device is intended for use in

automotive and general purpose

switching applications.

SYMBOL

PARAMETER

MAX.

UNIT

V_DS

I_D

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state

resistance

125

175

˚C

mΩ

P_tot

T_j

R_DS(ON)

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

DESCRIPTION

gate

drain

source

mb drain

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

±V_GS

I_D

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (DC)

R_GS= 20 kΩ

T_mb= 25 ˚C

T_mb= 100 ˚C

164

125

175

I_D

I_DM

P_tot

T_stg

T_j

Drain current (pulse peak value) T_mb= 25 ˚C

Total power dissipation

Storage temperature

Junction temperature

T_mb= 25 ˚C

- 55

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction to

1.2

K/W

mounting base

Thermal resistance junction to

ambient

minimum footprint,

FR4 board (see Fig. 18).

K/W

February 1996

Rev 1.000

12 3 4 5 6 7

中文翻译

下载PDF

与BUK464-60H相关器件

型号	品牌	获取价格	描述	数据表
BUK465-100A	NXP	获取价格	PowerMOS transistor
BUK465-100A,118	NXP	获取价格	26A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET
BUK465-100A118	NXP	获取价格	TRANSISTOR 26 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
BUK465-100A-T	NXP	获取价格	TRANSISTOR 26 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
BUK465-200A	NXP	获取价格	PowerMOS transistor
BUK465-200A-T	NXP	获取价格	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
BUK465-60A	NXP	获取价格	PowerMOS transistor
BUK465-60A-T	NXP	获取价格	TRANSISTOR 41 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
BUK465-60H	NXP	获取价格	PowerMOS transistor
BUK465-60H-T	NXP	获取价格	TRANSISTOR 45 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power