Datasheet > BUK464-60H

BUK464-60H

更新时间： 2024-11-04 22:50:23

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
7页	57K
描述
PowerMOS transistor

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中文翻译

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数据手册

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BUK464-60H 数据手册

Philips Semiconductors

Product specification

PowerMOS transistor

BUK464-60H

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

field-effect power transistor in a

plastic envelope suitable for surface

mount applications.

The device is intended for use in

automotive and general purpose

switching applications.

SYMBOL

PARAMETER

MAX.

UNIT

V_DS

I_D

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state

resistance

125

175

˚C

mΩ

P_tot

T_j

R_DS(ON)

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

DESCRIPTION

gate

drain

source

mb drain

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

±V_GS

I_D

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (DC)

R_GS= 20 kΩ

T_mb= 25 ˚C

T_mb= 100 ˚C

164

125

175

I_D

I_DM

P_tot

T_stg

T_j

Drain current (pulse peak value) T_mb= 25 ˚C

Total power dissipation

Storage temperature

Junction temperature

T_mb= 25 ˚C

- 55

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction to

1.2

K/W

mounting base

Thermal resistance junction to

ambient

minimum footprint,

FR4 board (see Fig. 18).

K/W

February 1996

Rev 1.000

12 3 4 5 6 7

中文翻译

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