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BUK466-200A PDF预览

BUK466-200A

更新时间: 2024-11-22 22:50:23
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
7页 71K
描述
PowerMOS transistor

BUK466-200A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
Is Samacsys:N雪崩能效等级(Eas):150 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):19 A
最大漏极电流 (ID):19 A最大漏源导通电阻:0.16 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):100 pF
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL功耗环境最大值:150 W
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):76 A
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):255 ns
最大开启时间(吨):90 nsBase Number Matches:1

BUK466-200A 数据手册

 浏览型号BUK466-200A的Datasheet PDF文件第2页浏览型号BUK466-200A的Datasheet PDF文件第3页浏览型号BUK466-200A的Datasheet PDF文件第4页浏览型号BUK466-200A的Datasheet PDF文件第5页浏览型号BUK466-200A的Datasheet PDF文件第6页浏览型号BUK466-200A的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
PowerMOS transistor  
BUK466-200A  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a plastic  
envelope suitable for use in surface  
mount applications.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
resistance  
200  
19  
150  
175  
0.16  
V
A
W
˚C  
The device is intended for use in  
Switched Mode Power Supplies  
(SMPS), motor control, welding,  
DC/DC and AC/DC converters, and in  
general purpose switching  
Ptot  
Tj  
RDS(ON)  
applications.  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
mb  
gate  
2
drain  
g
3
source  
2
mb drain  
1
3
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
ID  
Drain-source voltage  
-
-
200  
200  
30  
V
V
Drain-gate voltage  
RGS = 20 kΩ  
-
Gate-source voltage  
Drain current (DC)  
Drain current (DC)  
Drain current (pulse peak value)  
Total power dissipation  
Storage temperature  
Junction temperature  
-
-
V
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
-
-
19  
A
ID  
-
13  
76  
150  
175  
175  
A
IDM  
Ptot  
Tstg  
Tj  
-
A
-
- 55  
-
W
˚C  
˚C  
-
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX.  
UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to  
-
-
-
1.0  
-
K/W  
mounting base  
Thermal resistance junction to  
ambient  
minimum footprint,  
FR4 board (see Fig. 18).  
50  
K/W  
February 1996  
1
Rev 1.000  

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