生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 雪崩能效等级(Eas): | 30 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 10 A |
最大漏源导通电阻: | 0.13 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 100 pF | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 22 W | 最大脉冲漏极电流 (IDM): | 40 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 90 ns | 最大开启时间(吨): | 59 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK472-60B | NXP |
获取价格 |
PowerMOS transistor Isolated version of BUK452-60A/B | |
BUK473-100A | NXP |
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PowerMOS transistor Isolated version of BUK453-100A/B | |
BUK473-100A,127 | NXP |
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9A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
BUK473-100A127 | NXP |
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TRANSISTOR 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET | |
BUK473-100B | NXP |
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PowerMOS transistor Isolated version of BUK453-100A/B | |
BUK473-100B,127 | NXP |
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8A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
BUK473-100B127 | NXP |
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TRANSISTOR 8 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET G | |
BUK473-60A | NXP |
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PowerMOS transistor Isolated version of BUK453-60A/B | |
BUK473-60B | NXP |
获取价格 |
PowerMOS transistor Isolated version of BUK453-60A/B | |
BUK474-200A | NXP |
获取价格 |
PowerMOS transistor Isolated version of BUK454-200A/B |