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BUK472-60A PDF预览

BUK472-60A

更新时间: 2024-11-04 22:50:23
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 59K
描述
PowerMOS transistor Isolated version of BUK452-60A/B

BUK472-60A 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84雪崩能效等级(Eas):30 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):10 A
最大漏源导通电阻:0.13 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):100 pFJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:22 W最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):90 ns最大开启时间(吨):59 ns

BUK472-60A 数据手册

 浏览型号BUK472-60A的Datasheet PDF文件第2页浏览型号BUK472-60A的Datasheet PDF文件第3页浏览型号BUK472-60A的Datasheet PDF文件第4页浏览型号BUK472-60A的Datasheet PDF文件第5页浏览型号BUK472-60A的Datasheet PDF文件第6页浏览型号BUK472-60A的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
PowerMOS transistor  
Isolated version of BUK452-60A/B  
BUK472-60A/B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a  
plastic full-pack envelope.  
The device is intended for use in  
Switched Mode Power Supplies  
(SMPS), motor control, welding,  
DC/DC and AC/DC converters, and  
in automotive and general purpose  
switching applications.  
SYMBOL  
PARAMETER  
MAX.  
MAX.  
UNIT  
BUK472  
-60A  
60  
10  
22  
150  
0.13  
-60B  
60  
9.2  
22  
150  
0.15  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
resistance  
V
A
W
˚C  
Ptot  
Tj  
RDS(ON)  
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
case  
gate  
2
drain  
g
3
source  
case isolated  
1
2 3  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
Drain-source voltage  
-
-
-
-
60  
60  
30  
V
V
V
Drain-gate voltage  
RGS = 20 kΩ  
Gate-source voltage  
-
-60A  
10  
6.3  
40  
-60B  
ID  
Drain current (DC)  
Ths = 25 ˚C  
Ths = 100 ˚C  
Ths = 25 ˚C  
-
-
-
9.2  
5.8  
37  
A
A
A
ID  
Drain current (DC)  
IDM  
Drain current (pulse peak value)  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction temperature  
Ths = 25 ˚C  
-
-
-
- 55  
-
22  
150  
150  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Thermal resistance junction to with heatsink compound  
-
-
-
5.68  
-
K/W  
K/W  
heatsink  
Thermal resistance junction to  
ambient  
55  
November 1996  
1
Rev 1.200  

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