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BUK474-200B PDF预览

BUK474-200B

更新时间: 2024-11-25 22:50:23
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 83K
描述
PowerMOS transistor Isolated version of BUK454-200A/B

BUK474-200B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
雪崩能效等级(Eas):50 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):4.7 A最大漏极电流 (ID):4.7 A
最大漏源导通电阻:0.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):80 pFJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:25 W
最大功率耗散 (Abs):25 W最大脉冲漏极电流 (IDM):19 A
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):180 ns
最大开启时间(吨):90 nsBase Number Matches:1

BUK474-200B 数据手册

 浏览型号BUK474-200B的Datasheet PDF文件第2页浏览型号BUK474-200B的Datasheet PDF文件第3页浏览型号BUK474-200B的Datasheet PDF文件第4页浏览型号BUK474-200B的Datasheet PDF文件第5页浏览型号BUK474-200B的Datasheet PDF文件第6页浏览型号BUK474-200B的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
PowerMOS transistor  
Isolated version of BUK454-200A/B  
BUK474-200A/B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a  
plastic full-pack envelope. The  
deviceisintended foruseinSwitched  
Mode Power Supplies (SMPS),  
motor control, welding, DC/DC and  
AC/DC converters, and in general  
purpose switching applications.  
SYMBOL  
PARAMETER  
MAX.  
MAX.  
UNIT  
BUK474  
-200A  
200  
5.3  
25  
0.4  
-200B  
200  
4.7  
25  
0.5  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Drain-source on-state  
resistance  
V
A
W
Ptot  
RDS(ON)  
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
case  
gate  
2
drain  
g
3
source  
case isolated  
1
2 3  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
Drain-source voltage  
-
-
-
-
200  
200  
30  
V
V
V
Drain-gate voltage  
RGS = 20 kΩ  
Gate-source voltage  
-
-200A  
5.3  
-200B  
ID  
Drain current (DC)  
Ths = 25 ˚C  
Ths = 100 ˚C  
Ths = 25 ˚C  
-
-
-
4.7  
3.0  
19  
A
A
A
ID  
Drain current (DC)  
3.3  
IDM  
Drain current (pulse peak value)  
21  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction temperature  
Ths = 25 ˚C  
-
-
-
- 55  
-
25  
150  
150  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Thermal resistance junction to with heatsink compound  
-
-
-
5
-
K/W  
K/W  
heatsink  
Thermal resistance junction to  
ambient  
55  
April 1998  
1
Rev 1.100  

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