BUK481-60A

更新时间： 2024-09-15 22:32:39

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
8页	58K
描述
PowerMOS transistor

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中文翻译

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BUK481-60A 数据手册

Philips Semiconductors

Product specification

PowerMOS transistor

BUK481-60A

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

field-effect power transistor in a

plastic envelope suitable for surface

mount applications.

The device is intended for use in

automotive and general purpose

switching applications.

SYMBOL

PARAMETER

MAX.

UNIT

V_DS

I_D

Drain-source voltage

Drain current (DC)

1.6

1.5

150

0.35

˚C

Ω

P_tot

T_j

Total power dissipation

Junction temperature

Drain-source on-state

R_DS(ON)

resistance;

V_GS= 10 V

PINNING - SOT223

PIN CONFIGURATION

SYMBOL

DESCRIPTION

gate

drain

source

drain (tab)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

±V_GS

I_D

Drain-source voltage

Drain-gate voltage

R_GS= 20 kΩ

Gate-source voltage

Drain current (DC)

Drain current (pulse peak value)

Total power dissipation

Storage temperature

Junction temperature

T_amb= 25 ˚C

T_amb= 100 ˚C

T_amb= 25 ˚C

1.6

6.4

1.5

150

I_D

I_DM

P_tot

T_stg

T_j

˚C

-55

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-sp}

R_{th j-amb}

From junction to solder point¹

From junction to ambient

Mounted on any PCB .

Mounted on PCB of Fig.18

K/W

1 Temperature measured at solder joint on drain tab.

November 1995

Rev 1.100

12 3 4 5 6 7 8

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与BUK481-60A相关器件

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BUK481-60AT/R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 1.6A I(D) \| SOT-223
BUK482-100	TI	获取价格	1.8A, 100V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET
BUK482-100/S62Z	TI	获取价格	1.8A, 100V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET
BUK482-100A	NXP	获取价格	PowerMOS transistor
BUK482-100AT/R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 1.8A I(D) \| SOT-223
BUK482-200A	NXP	获取价格	PowerMOS transistor
BUK482-200A,115	NXP	获取价格	2A, 200V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET
BUK482-200A,135	NXP	获取价格	2A, 200V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET
BUK482-200A115	NXP	获取价格	TRANSISTOR 2 A, 200 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
BUK482-200A135	NXP	获取价格	TRANSISTOR 2 A, 200 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power