BUK475-60H

更新时间： 2024-09-15 22:50:23

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
7页	76K
描述
PowerMOS transistor Isolated version of BUK455-60H

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BUK475-60H 数据手册

Philips Semiconductors

Product specification

PowerMOS transistor

BUK475-60H

Isolated version of BUK455-60H

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

field-effect power transistor in a

plasticfull-packenvelope.Thedevice

is intended for use in Automotive

applications, Switched Mode Power

Supplies (SMPS), motor control,

welding, DC/DC and AC/DC

converters, and in general purpose

switching applications.

SYMBOL

PARAMETER

MAX.

UNIT

V_DS

I_D

P_tot

T_j

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state

resistance

22.5

150

˚C

mΩ

R_DS(ON)

PINNING - SOT186A

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

gate

drain

source

case isolated

2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

±V_GS

I_D

Drain-source voltage

22.5

Drain-gate voltage

Gate-source voltage

Drain current (DC)

R_GS= 20 kΩ

T_hs= 25 ˚C

T_hs= 100 ˚C

I_D

I_DM

P_tot

T_stg

T_j

Drain current (pulse peak value) T_hs= 25 ˚C

150

Total power dissipation

Storage temperature

Junction temperature

T_hs= 25 ˚C

- 55

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R_{th j-hs}

R_{th j-a}

Thermal resistance junction to

heatsink

Thermal resistance junction to

ambient

with heatsink compound

4.17

K/W

November 1996

Rev 1.200

12 3 4 5 6 7

中文翻译

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BUK482-100/S62Z	TI	获取价格	1.8A, 100V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET
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