是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
雪崩能效等级(Eas): | 100 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 21 A | 最大漏极电流 (ID): | 21 A |
最大漏源导通电阻: | 0.038 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 275 pF | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 30 W | 最大功率耗散 (Abs): | 30 W |
最大脉冲漏极电流 (IDM): | 84 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Powers | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 225 ns | 最大开启时间(吨): | 120 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK474-800A | PHILIPS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
BUK474-800B | PHILIPS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
BUK475-100A | NXP |
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PowerMOS transistor Isolated version of BUK455-100A/B | |
BUK475-100B | NXP |
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PowerMOS transistor Isolated version of BUK455-100A/B | |
BUK475-200A | NXP |
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PowerMOS transistor Isolated version of BUK455-200A/B | |
BUK475-200A,127 | NXP |
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7.6A, 200V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
BUK475-200A127 | NXP |
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TRANSISTOR 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FE | |
BUK475-200B | NXP |
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PowerMOS transistor Isolated version of BUK455-200A/B | |
BUK475-200B,127 | NXP |
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7A, 200V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
BUK475-200B127 | NXP |
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TRANSISTOR 7 A, 200 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET |