生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 雪崩能效等级(Eas): | 35 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 6.6 A |
最大漏源导通电阻: | 0.25 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 26 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK472-100A127 | NXP |
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TRANSISTOR 6.6 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FE | |
BUK472-100B | NXP |
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PowerMOS transistor Isolated version of BUK452-100A/B | |
BUK472-100B,127 | NXP |
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6.1A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
BUK472-100B127 | NXP |
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TRANSISTOR 6.1 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET | |
BUK472-60A | NXP |
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PowerMOS transistor Isolated version of BUK452-60A/B | |
BUK472-60B | NXP |
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PowerMOS transistor Isolated version of BUK452-60A/B | |
BUK473-100A | NXP |
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PowerMOS transistor Isolated version of BUK453-100A/B | |
BUK473-100A,127 | NXP |
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9A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
BUK473-100A127 | NXP |
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TRANSISTOR 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET | |
BUK473-100B | NXP |
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PowerMOS transistor Isolated version of BUK453-100A/B |