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BUK472-100B PDF预览

BUK472-100B

更新时间: 2024-11-04 22:36:27
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 62K
描述
PowerMOS transistor Isolated version of BUK452-100A/B

BUK472-100B 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
雪崩能效等级(Eas):35 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):6.1 A最大漏源导通电阻:0.3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):50 pF
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:22 W最大脉冲漏极电流 (IDM):24 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):85 ns最大开启时间(吨):54 ns
Base Number Matches:1

BUK472-100B 数据手册

 浏览型号BUK472-100B的Datasheet PDF文件第2页浏览型号BUK472-100B的Datasheet PDF文件第3页浏览型号BUK472-100B的Datasheet PDF文件第4页浏览型号BUK472-100B的Datasheet PDF文件第5页浏览型号BUK472-100B的Datasheet PDF文件第6页浏览型号BUK472-100B的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
PowerMOS transistor  
Isolated version of BUK452-100A/B  
BUK472-100A/B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a  
plastic full-pack envelope. The  
deviceisintended foruseinSwitched  
Mode Power Supplies (SMPS),  
motor control, welding, DC/DC and  
AC/DC converters, and in general  
purpose switching applications.  
SYMBOL  
PARAMETER  
MAX.  
MAX.  
UNIT  
BUK472  
-100A  
100  
6.6  
22  
150  
0.25  
-100B  
100  
6.1  
22  
150  
0.3  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
resistance  
V
A
W
˚C  
Ptot  
Tj  
RDS(ON)  
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
case  
gate  
2
drain  
g
3
source  
case isolated  
1
2 3  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
Drain-source voltage  
-
-
-
-
100  
100  
30  
V
V
V
Drain-gate voltage  
RGS = 20 kΩ  
Gate-source voltage  
-
-100A  
6.6  
-100B  
ID  
Drain current (DC)  
Ths = 25 ˚C  
Ths = 100 ˚C  
Ths = 25 ˚C  
-
-
-
6.1  
3.8  
24  
A
A
A
ID  
Drain current (DC)  
4.1  
IDM  
Drain current (pulse peak value)  
26  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction temperature  
Ths = 25 ˚C  
-
-
-
- 55  
-
22  
150  
150  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Thermal resistance junction to with heatsink compound  
-
-
-
5.68  
-
K/W  
K/W  
heatsink  
Thermal resistance junction to  
ambient  
55  
November 1996  
1
Rev 1.200  

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