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BUK466-60H-T PDF预览

BUK466-60H-T

更新时间: 2024-09-16 20:57:55
品牌 Logo 应用领域
恩智浦 - NXP 晶体管
页数 文件大小 规格书
1页 47K
描述
TRANSISTOR 60 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

BUK466-60H-T 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84最小漏源击穿电压:60 V
最大漏极电流 (ID):60 A最大漏源导通电阻:0.02 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

BUK466-60H-T 数据手册

  

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