5秒后页面跳转
BUK465-60H PDF预览

BUK465-60H

更新时间: 2024-11-05 22:50:23
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 76K
描述
PowerMOS transistor

BUK465-60H 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84雪崩能效等级(Eas):100 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):45 A
最大漏源导通电阻:0.03 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):275 pFJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
功耗环境最大值:125 W最大脉冲漏极电流 (IDM):172 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):290 ns最大开启时间(吨):130 ns
Base Number Matches:1

BUK465-60H 数据手册

 浏览型号BUK465-60H的Datasheet PDF文件第2页浏览型号BUK465-60H的Datasheet PDF文件第3页浏览型号BUK465-60H的Datasheet PDF文件第4页浏览型号BUK465-60H的Datasheet PDF文件第5页浏览型号BUK465-60H的Datasheet PDF文件第6页浏览型号BUK465-60H的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
PowerMOS transistor  
BUK465-60H  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a  
plastic envelope suitable for surface  
mount applications.  
The device is intended for use in  
automotive and general purpose  
switching applications.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
resistance  
60  
43  
125  
175  
34  
V
A
W
˚C  
m  
Ptot  
Tj  
RDS(ON)  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
mb  
gate  
2
drain  
g
3
source  
2
mb drain  
1
3
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
ID  
Drain-source voltage  
-
-
60  
60  
V
V
Drain-gate voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (DC)  
RGS = 20 kΩ  
-
-
-
30  
V
Tmb = 25 ˚C  
Tmb = 100 ˚C  
-
43  
31  
172  
125  
175  
175  
A
ID  
-
A
IDM  
Ptot  
Tstg  
Tj  
Drain current (pulse peak value) Tmb = 25 ˚C  
-
A
Total power dissipation  
Storage temperature  
Junction Temperature  
Tmb = 25 ˚C  
-
-
-
- 55  
-
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to  
-
-
1.2  
-
K/W  
K/W  
mounting base  
Thermal resistance junction to  
ambient  
minimum footprint,  
FR4 board (see Fig. 18).  
50  
August 1995  
1
Rev 1.000  

与BUK465-60H相关器件

型号 品牌 获取价格 描述 数据表
BUK465-60H-T NXP

获取价格

TRANSISTOR 45 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
BUK466-100A NXP

获取价格

PowerMOS transistor
BUK466-100A,118 NXP

获取价格

34A, 100V, 0.057ohm, N-CHANNEL, Si, POWER, MOSFET
BUK466-100A118 NXP

获取价格

TRANSISTOR 34 A, 100 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
BUK466-100A-T NXP

获取价格

TRANSISTOR 34 A, 100 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
BUK466-200A NXP

获取价格

PowerMOS transistor
BUK466-200A,118 NXP

获取价格

19A, 200V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET
BUK466-200A118 NXP

获取价格

TRANSISTOR 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
BUK466-60A NXP

获取价格

PowerMOS transistor
BUK466-60A-T NXP

获取价格

TRANSISTOR 52 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power