生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 34 A | 最大漏源导通电阻: | 0.057 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 200 pF |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 150 W |
最大脉冲漏极电流 (IDM): | 136 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 285 ns |
最大开启时间(吨): | 90 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK466-200A | NXP |
获取价格 |
PowerMOS transistor | |
BUK466-200A,118 | NXP |
获取价格 |
19A, 200V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET | |
BUK466-200A118 | NXP |
获取价格 |
TRANSISTOR 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK466-60A | NXP |
获取价格 |
PowerMOS transistor | |
BUK466-60A-T | NXP |
获取价格 |
TRANSISTOR 52 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK466-60H | NXP |
获取价格 |
60A, 60V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET | |
BUK466-60H-T | NXP |
获取价格 |
TRANSISTOR 60 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK472-100A | NXP |
获取价格 |
PowerMOS transistor Isolated version of BUK452-100A/B | |
BUK472-100A,127 | NXP |
获取价格 |
6.6A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
BUK472-100A127 | NXP |
获取价格 |
TRANSISTOR 6.6 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FE |