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BUK465-60A PDF预览

BUK465-60A

更新时间: 2024-11-04 22:50:23
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 61K
描述
PowerMOS transistor

BUK465-60A 数据手册

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Philips Semiconductors  
Product specification  
PowerMOS transistor  
BUK465-60A  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a plastic  
envelope suitable for surface mount  
applications.  
The device is intended for use in  
Switched Mode Power Supplies  
(SMPS), motor control, welding,  
DC/DC and AC/DC converters, and in  
automotive and general purpose  
switching applications.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
resistance  
-60A  
60  
41  
125  
175  
0.038  
V
A
W
˚C  
Ptot  
Tj  
RDS(ON)  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
mb  
gate  
2
drain  
g
3
source  
2
mb drain  
1
3
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
ID  
Drain-source voltage  
-
-
60  
60  
V
V
Drain-gate voltage  
RGS = 20 kΩ  
-
Gate-source voltage  
Drain current (DC)  
Drain current (DC)  
Drain current (pulse peak value)  
Total power dissipation  
Storage temperature  
Junction temperature  
-
-
30  
V
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
-
-
41  
29  
164  
125  
175  
175  
A
ID  
-
A
IDM  
Ptot  
Tstg  
Tj  
-
A
-
- 55  
-
W
˚C  
˚C  
-
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX.  
UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to  
-
-
-
1.2  
-
K/W  
mounting base  
Thermal resistance junction to  
ambient  
minimum footprint,  
FR4 boards (see Fig 18).  
50  
K/W  
February 1996  
1
Rev 1.000  

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