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BUK463-60A PDF预览

BUK463-60A

更新时间: 2024-11-04 22:13:35
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 76K
描述
PowerMOS transistor

BUK463-60A 数据手册

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Philips Semiconductors  
Product Specification  
PowerMOS transistor  
BUK463-60A/B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a  
plastic envelope.  
The device is intended for use in  
Switched Mode Power Supplies  
(SMPS), motor control, welding,  
DC/DC and AC/DC converters, and  
in automotive and general purpose  
switching applications.  
SYMBOL  
PARAMETER  
MAX.  
MAX.  
UNIT  
BUK463  
-60A  
60  
22  
75  
175  
0.08  
-60B  
60  
20  
75  
175  
0.10  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
resistance  
V
A
W
˚C  
Ptot  
Tj  
RDS(ON)  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
mb  
gate  
2
drain  
g
3
source  
2
mb drain  
1
3
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
Drain-source voltage  
-
-
-
-
60  
60  
30  
V
V
V
Drain-gate voltage  
RGS = 20 kΩ  
Gate-source voltage  
-
-60A  
22  
-60B  
ID  
Drain current (DC)  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
-
-
-
20  
14  
80  
A
A
A
ID  
Drain current (DC)  
15  
IDM  
Drain current (pulse peak value)  
88  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction Temperature  
Tmb = 25 ˚C  
-
-
-
- 55  
-
75  
175  
175  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to  
-
-
2.0  
-
K/W  
mounting base  
Thermal resistance junction to  
ambient  
minimum footprint,  
FR4 board (see Fig. 18).  
50  
K/W  
July 1995  
1
Rev 1.000  

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