生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 800 V |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 16 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK456-800A127 | NXP |
获取价格 |
TRANSISTOR 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose | |
BUK456-800B | NXP |
获取价格 |
PowerMOS transistor | |
BUK456-800B,127 | NXP |
获取价格 |
3.5A, 800V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
BUK456-800B/B | ETC |
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TRANSISTOR TO 220 MOSFET N KANAL | |
BUK456-800B127 | NXP |
获取价格 |
TRANSISTOR 3.5 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpos | |
BUK457-400 | NXP |
获取价格 |
POWER MOS TRANSISTOR | |
BUK457-400A | NXP |
获取价格 |
POWER MOS TRANSISTOR | |
BUK457-400B | NXP |
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POWER MOS TRANSISTOR | |
BUK457-450B | ETC |
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N-Channel Enhancement MOSFET | |
BUK457-500A | ETC |
获取价格 |
N-Channel Enhancement MOSFET |