Datasheet > BUK456-800B/B

BUK456-800B/B

更新时间： 2024-11-22 23:37:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
7页	52K
描述
TRANSISTOR TO 220 MOSFET N KANAL

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BUK456-800B/B 数据手册

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK456-800A/B

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

field-effect power transistor in a

plastic envelope.

The device is intended for use in

Switched Mode Power Supplies

(SMPS), motor control, welding,

DC/DC and AC/DC converters, and

in general purpose switching

applications.

SYMBOL

PARAMETER

MAX.

UNIT

BUK456

-800A

800

125

-800B

800

3.5

125

V_DS

I_D

Drain-source voltage

Drain current (DC)

Total power dissipation

Drain-source on-state

resistance

Ω

P_tot

R_DS(ON)

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

tab

gate

drain

source

tab drain

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

±V_GS

Drain-source voltage

800

Drain-gate voltage

R_GS= 20 kΩ

Gate-source voltage

-800A

4.0

-800B

I_D

Drain current (DC)

T_mb= 25 ˚C

T_mb= 100 ˚C

T_mb= 25 ˚C

3.5

2.2

I_D

Drain current (DC)

2.5

I_DM

Drain current (pulse peak value)

P_tot

T_stg

T_j

Total power dissipation

Storage temperature

Junction Temperature

T_mb= 25 ˚C

- 55

125

150

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction to

1.0

K/W

mounting base

Thermal resistance junction to

ambient

May 1995

Rev 1.200

12 3 4 5 6 7

中文翻译

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