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BUK456-800B/B PDF预览

BUK456-800B/B

更新时间: 2024-09-14 23:37:23
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
7页 52K
描述
TRANSISTOR TO 220 MOSFET N KANAL

BUK456-800B/B 数据手册

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Philips Semiconductors  
Product Specification  
PowerMOS transistor  
BUK456-800A/B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a  
plastic envelope.  
The device is intended for use in  
Switched Mode Power Supplies  
(SMPS), motor control, welding,  
DC/DC and AC/DC converters, and  
in general purpose switching  
applications.  
SYMBOL  
PARAMETER  
MAX.  
MAX.  
UNIT  
BUK456  
-800A  
800  
4
125  
3
-800B  
800  
3.5  
125  
4
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Drain-source on-state  
resistance  
V
A
W
Ptot  
RDS(ON)  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
tab  
gate  
2
drain  
g
3
source  
tab drain  
1 2 3  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
Drain-source voltage  
-
-
-
-
800  
800  
30  
V
V
V
Drain-gate voltage  
RGS = 20 kΩ  
Gate-source voltage  
-
-800A  
4.0  
-800B  
ID  
Drain current (DC)  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
-
-
-
3.5  
2.2  
14  
A
A
A
ID  
Drain current (DC)  
2.5  
IDM  
Drain current (pulse peak value)  
16  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction Temperature  
Tmb = 25 ˚C  
-
-
-
- 55  
-
125  
150  
150  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to  
-
-
-
1.0  
-
K/W  
K/W  
mounting base  
Thermal resistance junction to  
ambient  
60  
May 1995  
1
Rev 1.200  

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