5秒后页面跳转
BUK463-100A PDF预览

BUK463-100A

更新时间: 2024-11-25 22:32:39
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
7页 80K
描述
PowerMOS transistor

BUK463-100A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
雪崩能效等级(Eas):70 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):14 A最大漏极电流 (ID):14 A
最大漏源导通电阻:0.16 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):100 pFJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
功耗环境最大值:75 W最大功率耗散 (Abs):75 W
最大脉冲漏极电流 (IDM):56 A认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):145 ns最大开启时间(吨):60 ns
Base Number Matches:1

BUK463-100A 数据手册

 浏览型号BUK463-100A的Datasheet PDF文件第2页浏览型号BUK463-100A的Datasheet PDF文件第3页浏览型号BUK463-100A的Datasheet PDF文件第4页浏览型号BUK463-100A的Datasheet PDF文件第5页浏览型号BUK463-100A的Datasheet PDF文件第6页浏览型号BUK463-100A的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
PowerMOS transistor  
BUK463-100A  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a plastic  
envelope suitable for surface mount  
applications.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
resistance  
100  
14  
V
A
W
˚C  
VDS  
ID  
The device is intended for use in  
Switched Mode Power Supplies  
(SMPS), motor control, welding,  
DC/DC and AC/DC converters, and in  
general purpose switching  
75  
Ptot  
Tj  
175  
0.16  
RDS(ON)  
applications.  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
mb  
gate  
2
drain  
g
3
source  
2
mb drain  
1
3
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
ID  
Drain-source voltage  
-
-
100  
100  
30  
V
V
Drain-gate voltage  
RGS = 20 kΩ  
-
Gate-source voltage  
Drain current (DC)  
Drain current (DC)  
Drain current (pulse peak value)  
Total power dissipation  
Storage temperature  
Junction temperature  
-
-
V
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
-
-
14  
A
ID  
-
10  
A
IDM  
Ptot  
Tstg  
Tj  
-
56  
A
-
- 55  
-
75  
W
˚C  
˚C  
175  
175  
-
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX.  
UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to  
mounting base  
Thermal resistance junction to minimum footprint  
ambient FR4 board (see fig. 18)  
-
-
-
2
-
K/W  
50  
K/W  
February 1996  
1
Rev 1.000  

与BUK463-100A相关器件

型号 品牌 获取价格 描述 数据表
BUK463-100A,118 NXP

获取价格

14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET
BUK463-100A118 NXP

获取价格

TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
BUK463-100A-T NXP

获取价格

TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
BUK463-60A NXP

获取价格

PowerMOS transistor
BUK463-60A-T NXP

获取价格

TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
BUK463-60B NXP

获取价格

PowerMOS transistor
BUK464-200A NXP

获取价格

PowerMOS transistor
BUK464-60H NXP

获取价格

PowerMOS transistor
BUK465-100A NXP

获取价格

PowerMOS transistor
BUK465-100A,118 NXP

获取价格

26A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET