是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
雪崩能效等级(Eas): | 70 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 14 A | 最大漏极电流 (ID): | 14 A |
最大漏源导通电阻: | 0.16 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 100 pF | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 75 W | 最大功率耗散 (Abs): | 75 W |
最大脉冲漏极电流 (IDM): | 56 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Powers | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 145 ns | 最大开启时间(吨): | 60 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK463-100A,118 | NXP |
获取价格 |
14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET | |
BUK463-100A118 | NXP |
获取价格 |
TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK463-100A-T | NXP |
获取价格 |
TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK463-60A | NXP |
获取价格 |
PowerMOS transistor | |
BUK463-60A-T | NXP |
获取价格 |
TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK463-60B | NXP |
获取价格 |
PowerMOS transistor | |
BUK464-200A | NXP |
获取价格 |
PowerMOS transistor | |
BUK464-60H | NXP |
获取价格 |
PowerMOS transistor | |
BUK465-100A | NXP |
获取价格 |
PowerMOS transistor | |
BUK465-100A,118 | NXP |
获取价格 |
26A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET |