生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 雪崩能效等级(Eas): | 70 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 14 A |
最大漏源导通电阻: | 0.16 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 56 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK463-100A118 | NXP |
获取价格 |
TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK463-100A-T | NXP |
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TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK463-60A | NXP |
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PowerMOS transistor | |
BUK463-60A-T | NXP |
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TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK463-60B | NXP |
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PowerMOS transistor | |
BUK464-200A | NXP |
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PowerMOS transistor | |
BUK464-60H | NXP |
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PowerMOS transistor | |
BUK465-100A | NXP |
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PowerMOS transistor | |
BUK465-100A,118 | NXP |
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26A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET | |
BUK465-100A118 | NXP |
获取价格 |
TRANSISTOR 26 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |