Datasheet > IRFBE30PBF

IRFBE30PBF

更新时间： 2024-09-15 12:34:51

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	3845K
描述
Dynamic dV/dt Rating Repetitive Avalanche Rated

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFBE30PBF 数据手册

IRFBE30, SiHFBE30

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

800

Available

R_DS(on)(Ω)

V_GS= 10 V

3.0

RoHS*

Q_g(Max.) (nC)

9.6

COMPLIANT

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-220

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRFBE30PbF

SiHFBE30-E3

IRFBE30

Lead (Pb)-free

SnPb

SiHFBE30

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

800

V_GS

T_C= 25 °C

T_C=100°C

4.1

Continuous Drain Current

V_GSat 10 V

I_D

2.6

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

260

4.1

E_AR

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

125

2.0

dV/dt

T_J, T_stg

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 29 mH, R_G= 25 Ω, I_AS= 4.1 A (see fig. 12).

c. I_SD≤ 4.1 A, dI/dt ≤ 100 A/µs, V_DD≤ 600, T_J≤ 150 °C.

d. 1.6 mm from case.

www.kersemi.com

12 3 4 5 6 7

中文翻译

下载PDF

与IRFBE30PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFBE30S	VISHAY	获取价格	Power MOSFET
IRFBE30S	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L	VISHAY	获取价格	Power MOSFET
IRFBE30S_V01	VISHAY	获取价格	Power MOSFET
IRFBE30SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFBE30SPBF	VISHAY	获取价格	Power MOSFET
IRFBE30STRLPBF	VISHAY	获取价格	Power MOSFET
IRFBE30STRLPBFA	VISHAY	获取价格	Power MOSFET
IRFBE30STRR	VISHAY	获取价格	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRFBE30STRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal