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STP2NA50FI PDF预览

STP2NA50FI

更新时间: 2024-09-26 22:12:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
6页 60K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP2NA50FI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ISOWATT220, 3 PIN
针数:3Reach Compliance Code:not_compliant
风险等级:5.62其他特性:AVALANCHE RATED
雪崩能效等级(Eas):42 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):2 A最大漏极电流 (ID):2 A
最大漏源导通电阻:4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):35 W
最大脉冲漏极电流 (IDM):11.2 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP2NA50FI 数据手册

 浏览型号STP2NA50FI的Datasheet PDF文件第2页浏览型号STP2NA50FI的Datasheet PDF文件第3页浏览型号STP2NA50FI的Datasheet PDF文件第4页浏览型号STP2NA50FI的Datasheet PDF文件第5页浏览型号STP2NA50FI的Datasheet PDF文件第6页 
STP2NA50  
STP2NA50FI  
N - CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTOR  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
< 4 Ω  
4 Ω  
ID  
STP2NA50  
STP2NA50FI  
500 V  
500 V  
2.8 A  
2 A  
<
TYPICAL RDS(on) = 3.25 Ω  
± 30V GATE TO SOURCE VOLTAGE RATING  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
2
1
1
REDUCED THRESHOLD VOLTAGE SPREAD  
TO-220  
ISOWATT220  
APPLICATIONS  
MEDIUM CURRENT, HIGH SPEED  
SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
CONSUMER AND INDUSTRIAL LIGHTING  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP2NA50  
STP2NA50FI  
VDS  
VDGR  
VGS  
ID  
Drain-Source Voltage (Vgs = 0)  
Drain-Gate Voltage (Rgs = 20 K)  
Gate-Source Voltage  
Drain-Current (continuous) at Tc = 25oC  
Drain-Current (continuous) at Tc = 100oC  
Drain-Current (Pulsed)  
500  
500  
± 30  
V
V
V
2.8  
1.8  
11.2  
75  
2
A
ID  
1.25  
11.2  
35  
A
IDM()  
Ptot  
A
Total Dissipation at Tc = 25oC  
W
Derating Factor  
0.6  
-
0.28  
4000  
W/oC  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
V
-65 to 150  
150  
oC  
oC  
Max Operating Junction Temperature  
()Pulse width limited by safe operating area  
1/6  
March 1996  

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