是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.37 | Is Samacsys: | N |
雪崩能效等级(Eas): | 200 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 40 A | 最大漏极电流 (ID): | 40 A |
最大漏源导通电阻: | 0.022 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 80 W | 最大脉冲漏极电流 (IDM): | 160 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB3015LT4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-263AB | |
STB3020L | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 30V - 0.019ohm - 40A - D2PAK STripFET] POWER MOSFET | |
STB3020LT4 | STMICROELECTRONICS |
获取价格 |
40A, 30V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | |
STB3055L2 | SAMHOP |
获取价格 |
N-Channel Logic Level E nhancement Mode Field Effect Transistor | |
STB30N10 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 100V - 0.06ohm - 30A - D2PAK POWER MOS TRANSISTOR | |
STB30N10T4 | STMICROELECTRONICS |
获取价格 |
30A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | |
STB30N65DM6AG | STMICROELECTRONICS |
获取价格 |
Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in a D2PAK p | |
STB30N65M2AG | STMICROELECTRONICS |
获取价格 |
Power Field-Effect Transistor | |
STB30N65M5 | STMICROELECTRONICS |
获取价格 |
N-channel 650 V, 0.125 Ω, 22 A, MDmesh⢠V | |
STB30N80K5 | STMICROELECTRONICS |
获取价格 |
N沟道800 V、0.15 Ohm典型值、24 A MDmesh K5功率MOSFET,D |