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STB30N10T4 PDF预览

STB30N10T4

更新时间: 2024-11-26 20:52:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关脉冲晶体管
页数 文件大小 规格书
6页 118K
描述
30A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3

STB30N10T4 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:TO-263, D2PAK-3
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.78
雪崩能效等级(Eas):240 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):30 A最大漏极电流 (ID):30 A
最大漏源导通电阻:0.07 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):120 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB30N10T4 数据手册

 浏览型号STB30N10T4的Datasheet PDF文件第2页浏览型号STB30N10T4的Datasheet PDF文件第3页浏览型号STB30N10T4的Datasheet PDF文件第4页浏览型号STB30N10T4的Datasheet PDF文件第5页浏览型号STB30N10T4的Datasheet PDF文件第6页 
STB30N10  
2
N-CHANNEL 100V - 0.06 - 30A D PAK  
POWER MOSFET TRANSISTOR  
PRELIMINARY DATA  
V
R
I
D
TYPE  
DSS  
DS(on)  
STB30N10  
100 V  
<0.07 Ω  
30 A  
TYPICAL RDS(on) = 0.06 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100 C  
LOW GATE CHARGE  
VERY HIGH CURRENT CAPABILITY  
APPLICATION ORIENTED  
o
3
1
2
D PAK  
TO-263  
CHARACTERIZATION  
(suffix“T4”)  
SURFACE-MOUNTING D2PAK (TO-263)  
POWER PACKAGE IN TUBE (NO SUFFIX) OR  
IN TAPE & REEL (SUFFIX “T4")  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMP DRIVERS, etc.)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
100  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
100  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
±20  
V
I
Drain Current (continuos) at T = 25°C  
30  
A
D
C
I
Drain Current (continuos) at T = 100°C  
21  
A
D
C
I
()  
DM  
Drain Current (pulsed)  
120  
A
P
Total Dissipation at T = 25°C  
150  
W
tot  
C
Derating Factor  
1
W/°C  
°C  
°C  
T
stg  
Storage Temperature  
–65 to 175  
T
Max. Operating Junction Temperature  
175  
j
()Pulse width limited by safe operating area  
(1)I  
22 A, di/dt 300A/ms, V  
V
, Tj  
T
JMA  
SD  
DD  
(BR)DSS  
November 2000  
1/6  
This is preliminary data new product in development or undergoing evaluation. Details are subject to change without notice.  

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