Datasheet > STB30N65DM6AG

STB30N65DM6AG

更新时间： 2024-11-24 14:57:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	390K
描述
Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in a D2PAK package

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STB30N65DM6AG 数据手册

STB30N65DM6AG

Datasheet

Automotive-grade N-channel 650 V, 102 mΩ typ., 28 A MDmesh DM6

Power MOSFET in a D²PAK package

Features

TAB

DS(on)

max.

Order code

STB30N65DM6AG

650 V

115 mΩ

28 A

•

AEC-Q101 qualified

D²PAK

Fast-recovery body diode

Lower R_DS(on)per area vs previous generation

D(2, TAB)

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

S(3)

AM01476v1_tab

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STB30N65DM6AG

Product summary

Order code

Marking

STB30N65DM6AG

30N65DM6

Package

Packing

D²PAK

Tape and reel

DS13770 - Rev 1 - June 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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