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STB30N65M2AG PDF预览

STB30N65M2AG

更新时间: 2024-11-26 19:56:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 1222K
描述
Power Field-Effect Transistor

STB30N65M2AG 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownFactory Lead Time:17 weeks
风险等级:5.73Base Number Matches:1

STB30N65M2AG 数据手册

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STB30N65M2AG  
Datasheet  
Automotive-grade N-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2  
Power MOSFET in a D²PAK package  
Features  
TAB  
V
R
DS(on)  
max.  
I
D
Order code  
DS  
STB30N65M2AG  
650 V  
0.18 Ω  
20 A  
2
1
3
D²  
PAK  
AEC-Q101 qualified  
Extremely low gate charge  
Excellent output capacitance (COSS) profile  
100% avalanche tested  
D(2, TAB)  
Zener-protected  
G(1)  
Applications  
Switching applications  
S(3)  
AM01475V1  
Description  
This device is an N-channel Power MOSFET developed using MDmesh M2  
technology. Thanks to its strip layout and an improved vertical structure, the device  
exhibits low on-resistance and optimized switching characteristics, rendering it  
suitable for the most demanding high efficiency converters.  
Product status link  
STB30N65M2AG  
Product summary  
Order code  
Marking  
STB30N65M2AG  
30N65M2  
Package  
Packing  
D²PAK  
Tape and reel  
DS12263 - Rev 2 - December 2019  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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