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STB3015LT4 PDF预览

STB3015LT4

更新时间: 2024-11-22 23:34:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
7页 59K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-263AB

STB3015LT4 数据手册

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STB3015L  
STP3015L  
2
N-CHANNEL 30V - 0.013  
- 40A D PAK/TO-220  
STripFET POWER MOSFET  
PRELIMINARY DATA  
V
R
I
D
TYPE  
DSS  
DS(on)  
STB3015L  
STP3015L  
30 V  
30 V  
<0.0155 Ω  
<0.0155 Ω  
40 A  
40 A  
TYPICAL R (on) = 0.013 Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
o
LOW GATE CHARGE A 100 C  
3
1
APPLICATION ORIENTED  
CHARACTERIZATION  
3
2
2
D PAK  
TO-263  
(suffix“T4”)  
1
FOR THROUGH-HOLE VERSION CONTACT  
SALES OFFICE  
TO-220  
DESCRIPTION  
This Power Mosfet is the latest development of  
STMicroelectronics unique “Single Feature Size ” strip-  
based process. The resulting transistor shows extremely  
high packing density for low on-resistance, rugged  
avalance characteristics and less critical alignment steps  
therefore a remarkable manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS IN HIGH  
PERFORMANCE VRMs  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, etc.)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
Drain-source Voltage (V = 0)  
30  
30  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
V
DGR  
GS  
V
Gate- source Voltage  
±20  
40  
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
D
C
I
Drain Current (continuos) at T = 100°C  
28  
A
C
I
()  
Drain Current (pulsed)  
160  
80  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
0.53  
7
W/°C  
V/ns  
°C  
°C  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–65 to 175  
175  
T
Max. Operating Junction Temperature  
j
()Pulse width limited by safe operating area  
(1)I [ 40 A, di/dt m200A/ms, V [ V  
, Tj [ T  
(BR)DSS JMA  
SD  
DD  
November 2000  
1/7  
This is preliminary data new product in development or undergoing evaluation. Details are subject to change without notice.  

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