STB3055L2

更新时间： 2024-02-21 07:44:51

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	675K
描述
N-Channel Logic Level E nhancement Mode Field Effect Transistor

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数据手册

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STB3055L2 数据手册

S TP /B3055L2

S amHop Microelectronics C orp.

Nov 23, 2004

N-C hannel Logic Level E nhancement Mode Field E ffect Transistor

PR ODUCT S UMMAR Y

FE ATUR E S

S uper high dense cell design for low R DS (ON).

R ugged and reliable.

VDS S

R DS (ON) ( m

Ω

)

Max

40 @ VG S = 4.5V

60 @ VG S = 2.5V

20V

18A

TO-220 and TO-263 P ackage.

S TP S E R IE S

TO-220

S TB S E R IE S

TO-263(DD-P AK)

ABS OLUTE MAXIMUM R ATING S (T =25 C unless otherwise noted)

Limit

Unit

P arameter

S ymbol

Drain-S ource Voltage

G S

G ate-S ource Voltage

Drain C urrent-C ontinuous @ TJ =25 C

-P ulsed

Drain-S ource Diode Forward C urrent

Maximum P ower Dissipation

@ Tc=25 C

Operating and S torage

Temperature R ange

, TS TG

-55 to 175

THE R MAL C HAR AC TE R IS TIC S

J C

J A

Thermal R esistance, J unction-to-C ase

Thermal R esistance, J unction-to-Ambient

C /W

12 3 4 5 6 7

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