STB3015

更新时间： 2024-11-22 22:42:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
6页	63K
描述
N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

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STB3015 数据手册

STB3015L

STP3015L

N - CHANNEL 30V - 0.013 Ω - 40A - D PAK/TO-220

STripFET POWER MOSFET

PRELIMINARY DATA

TYPE

V_DSS

R_DS(on)

I_D

STB3015L

30 V

< 0.0155 Ω

40 A

■

TYPICAL R_DS(on)= 0.013 Ω

EXCEPTIONAL dv/dt CAPABILITY

LOW GATE CHARGE A 100^oC

APPLICATION ORIENTED

CHARACTERIZATION

D²PAK

TO-263

■

FOR THROUGH-HOLE VERSION

CONTACT SALES OFFICE

(Suffix "T4")

TO-220

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics unique " Single Feature

Size " strip-based process. The resulting tran-

sistor shows extremely high packing density for

low on-resistance, rugged avalanche charac-

teristics and less critical alignment steps therefore

a remarkable manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

■

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS IN HIGH

PERFORMANCE VRMs

■

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

± 20

Drain Current (continuous) at T_c= 25 C

I_D

Drain Current (continuous) at T_c= 100 C

_DM(• )

Drain Current (pulsed)

160

P_tot

Total Dissipation at T_c= 25 C

Derating Factor

0.53

W/^oC

V/ns

^oC

dv/dt(¹) Peak Diode Recovery voltage slope

T_stg

Storage Temperature

-65 to 175

T_j

Max. Operating Junction Temperature

175

(•) Pulse width limited by safe operating area

(1) I_SD≤ 40 A, di/dt ≤ 200 A/µs, V_DD≤ V_(BR)DSS, T_j≤ T_JMAX

1/5

July 1998

12 3 4 5 6

中文翻译

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