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STB26N60M2 PDF预览

STB26N60M2

更新时间: 2024-11-24 14:57:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 887K
描述
N沟道600 V、0.14 Ohm典型值、20 A MDmesh M2功率MOSFET,D2PAK封装

STB26N60M2 技术参数

生命周期:ActiveReach Compliance Code:compliant
Factory Lead Time:17 weeks风险等级:1.52
Base Number Matches:1

STB26N60M2 数据手册

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STB26N60M2  
N-channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2  
Power MOSFET in a D²PAK package  
Datasheet - production data  
Features  
VDS  
TJmax  
@
RDS(on)  
max.  
TAB  
Order code  
ID  
PTOT  
20  
A
169  
W
STB26N60M2  
650 V  
0.165 Ω  
2
1
3
Extremely low gate charge  
Excellent output capacitance (COSS) profile  
100% avalanche tested  
D²  
PAK  
Zener-protected  
Applications  
Figure 1: Internal schematic diagram  
Switching applications  
Description  
This device is an N-channel Power MOSFET  
developed using MDmesh™ M2 technology.  
Thanks to its strip layout and an improved vertical  
structure, the device exhibits low on-resistance  
and optimized switching characteristics,  
rendering it suitable for the most demanding high  
efficiency converters.  
Table 1: Device summary  
Order code  
Marking  
Package  
Packing  
STB26N60M2  
26N60M2  
D²PAK  
Tape and reel  
March 2017  
DocID030419 Rev 1  
1/15  
www.st.com  
This is information on a product in full production.  

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