Datasheet > STB26N60M2

STB26N60M2

更新时间： 2024-11-03 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	887K
描述
N沟道600 V、0.14 Ohm典型值、20 A MDmesh M2功率MOSFET，D2PAK封装

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中文翻译

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技术参数
数据手册

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STB26N60M2 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
Factory Lead Time：	17 weeks	风险等级：	1.52
Base Number Matches：	1

STB26N60M2 数据手册

STB26N60M2

N-channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2

Power MOSFET in a D²PAK package

Datasheet - production data

Features

V_DS

T_Jmax

R_DS(on)

max.

TAB

Order code

I_D

P_TOT

169

STB26N60M2

650 V

0.165 Ω



Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

D²

PAK

Zener-protected

Applications

Figure 1: Internal schematic diagram



Switching applications

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STB26N60M2

26N60M2

D²PAK

Tape and reel

March 2017

DocID030419 Rev 1

1/15

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...15

中文翻译

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