Datasheet > STB28N60DM2

STB28N60DM2

更新时间： 2024-11-24 14:57:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
20页	1095K
描述
N沟道600 V、0.13 Ohm典型值、21 A MDmesh DM2功率MOSFET，D2PAK封装

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中文翻译

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数据手册
替代型号

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STB28N60DM2 数据手册

STB28N60DM2, STP28N60DM2,

STW28N60DM2

N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2

Power MOSFETs in D²PAK, TO-220 and TO-247 packages

Datasheet - production data

TAB

Features

V_DS

T_Jmax.

R_DS(on)

max.

Order code

I_D

P_TOT

STB28N60DM2

STP28N60DM2

STW28N60DM2

D²PAK

TAB

650 V

0.16 Ω

21 A

170 W



Fast-recovery body diode

Extremely low gate charge and input

capacitance

TO-220

TO-247



Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

Figure 1: Internal schematic diagram

Applications



Switching applications

Description

These high voltage N-channel Power MOSFETs

are part of the MDmesh™ DM2 fast recovery

diode series. They offer very low recovery charge

(Q_rr) and time (t_rr) combined with low R_DS(on)

rendering them suitable for the most demanding

high efficiency converters and ideal for bridge

topologies and ZVS phase-shift converters.

Table 1: Device summary

Order code

STB28N60DM2

STP28N60DM2

STW28N60DM2

Marking

Package

Packing

Tape and reel

Tube

D²PAK

TO-220

TO-247

28N60DM2

Tube

April 2017

DocID027040 Rev 5

1/20

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...20

中文翻译

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STB28N60DM2 替代型号

型号	品牌	替代类型	描述	数据表
STB23NM60ND	STMICROELECTRONICS	类似代替	N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK -

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