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STB28N60M2 PDF预览

STB28N60M2

更新时间: 2024-11-24 14:57:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
21页 1114K
描述
N沟道600 V、0.135 Ohm典型值、22 A MDmesh M2功率MOSFET,D2PAK封装

STB28N60M2 数据手册

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STB28N60M2, STI28N60M2,  
STP28N60M2, STW28N60M2  
N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2  
Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247  
Datasheet - production data  
Features  
Order code  
STB28N60M2  
STI28N60M2  
STP28N60M2  
STW28N60M2  
VDS @ TJmax  
RDS(on) max.  
ID  
650 V  
0.150 Ω  
22 A  
Extremely low gate charge  
Excellent output capacitance (COSS) profile  
100% avalanche tested  
Zener-protected  
Figure 1: Internal schematic diagram  
Applications  
(
)
TAB  
2
Switching applications  
LCC converters, resonant converters  
D
Description  
These devices are N-channel Power MOSFETs  
developed using MDmesh™ M2 technology.  
Thanks to their strip layout and improved vertical  
structure, these devices exhibit low on-resistance  
and optimized switching characteristics,  
rendering them suitable for the most demanding  
high efficiency converters.  
(
)
1
G
(
)
3
AM15572V1  
S
Table 1: Device summary  
Order code  
Marking  
Package  
D²PAK  
I²PAK  
Packing  
STB28N60M2  
STI28N60M2  
STP28N60M2  
STW28N60M2  
Tape and reel  
28N60M2  
TO-220  
TO-247  
Tube  
March 2017  
DocID025254 Rev 4  
1/21  
www.st.com  
This is information on a product in full production.  
 

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