Datasheet > STB28N60M2

STB28N60M2

更新时间： 2024-11-03 14:57:35

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意法半导体 - STMICROELECTRONICS		/
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描述
N沟道600 V、0.135 Ohm典型值、22 A MDmesh M2功率MOSFET，D2PAK封装

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数据手册

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STB28N60M2 数据手册

STB28N60M2, STI28N60M2,

STP28N60M2, STW28N60M2

N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2

Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247

Datasheet - production data

Features

Order code

STB28N60M2

STI28N60M2

STP28N60M2

STW28N60M2

V_DS@ T_Jmax

R_DS(on)max.

I_D

650 V

0.150 Ω

22 A



Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

Zener-protected

Figure 1: Internal schematic diagram

Applications

(

)

TAB



Switching applications

LCC converters, resonant converters

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, these devices exhibit low on-resistance

and optimized switching characteristics,

rendering them suitable for the most demanding

high efficiency converters.

(

)

(

)

AM15572V1

Table 1: Device summary

Order code

Marking

Package

D²PAK

I²PAK

Packing

STB28N60M2

STI28N60M2

STP28N60M2

STW28N60M2

Tape and reel

28N60M2

TO-220

TO-247

Tube

March 2017

DocID025254 Rev 4

1/21

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...21

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