Datasheet > STB270N4F3_08

STB270N4F3_08

更新时间： 2024-11-02 06:14:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	381K
描述
N-channel 40 V - 2.1 mΩ - 160 A - TO-220 - D2PAK - I2PAK STripFET™ Power MOSFET

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STB270N4F3_08 数据手册

STB270N4F3

STI270N4F3 - STP270N4F3

N-channel 40 V - 2.1 mΩ - 160 A - TO-220 - D²PAK - I²PAK

STripFET™ Power MOSFET

Features

R_DS(on)

max

Type

V_DSS

I_D

P_TOT

STB270N4F3

STI270N4F3

STP270N4F3

40 V

< 2.5 mΩ 160 A 330 W

< 2.9 mΩ 120 A 330 W

I²PAK

TO-220

■ 100% avalanche tested

■ Standard threshold drive

Applications

D²PAK

■ High current, switching application

■ Automotive

Figure 1. Internal schematic diagram

Description

This n-channel enhancement mode Power

MOSFET is the latest refinement of

STMicroelectronics unique “single feature

size“strip-based process with less critical

alignment steps and therefore a remarkable

manufacturing reproducibility. The resulting

transistor shows extremely high packing density

for low on-resistance, rugged avalanche

characteristics and low gate charge.

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB270N4F3

STI270N4F3

STP270N4F3

270N4F3

D²PAK

I²PAK

Tape and reel

Tube

TO-220

Tube

April 2008

Rev 2

1/15

www.st.com

12 3 4 5 6 7...15

中文翻译

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