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SI9925DY-E3

更新时间: 2024-09-10 15:51:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 65K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SI9925DY-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84最大漏极电流 (Abs) (ID):5 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
湿度敏感等级:1工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

SI9925DY-E3 数据手册

 浏览型号SI9925DY-E3的Datasheet PDF文件第2页浏览型号SI9925DY-E3的Datasheet PDF文件第3页浏览型号SI9925DY-E3的Datasheet PDF文件第4页浏览型号SI9925DY-E3的Datasheet PDF文件第5页 
Si9925DY  
Vishay Siliconix  
Dual N-Channel 2.5-V (G-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.05 @ V = 4.5 V  
GS  
5.0  
4.2  
3.6  
0.06 @ V = 3.0 V  
GS  
20  
0.08 @ V = 2.5 V  
GS  
D
1
D
1
D
2
D
2
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
Top View  
S
1
S
2
Ordering Information: Si9925DY  
Si9925DY-T1 (with Tape and Reel)  
N-Channel MOSFET  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
"12  
5.0  
DS  
GS  
V
V
T
= 25_C  
= 70_C  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
4.0  
A
Pulsed Drain Current  
I
48  
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
1.7  
T
= 25_C  
= 70_C  
2
A
a
Maximum Power Dissipation  
P
D
W
T
A
1.3  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
a
Maximum Junction-to-Ambient  
R
thJA  
62.5  
_C/W  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 70145  
S-03950—Rev. N, 26-May-03  
www.vishay.com  
1
 

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