是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 最大漏极电流 (Abs) (ID): | 5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI9925DY-T1 | VISHAY |
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Dual N-Channel 2.5-V (G-S) MOSFET | |
SI9925DY-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-o | |
SI9926ADY | VISHAY |
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Dual N-Channel 2.5-V (G-S) MOSFET | |
SI9926ADY-T1 | VISHAY |
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Small Signal Field-Effect Transistor, 4.8A I(D), 20V, 2-Element, N-Channel, Silicon, Metal | |
SI9926ADY-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 4.8A I(D), 20V, 2-Element, N-Channel, Silicon, Metal | |
SI9926BDY | VISHAY |
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Dual N-Channel 2.5-V (G-S) MOSFET | |
SI9926BDY | TYSEMI |
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Drain-Source Voltage VDS V Gate-Source Voltage VGS -10 V | |
SI9926BDY | KEXIN |
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Dual N-Channel MOSFET | |
SI9926BDY (KI9926BDY) | KEXIN |
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Dual N-Channel MOSFET | |
SI9926BDY-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal |