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SI9926BDY PDF预览

SI9926BDY

更新时间: 2024-09-11 18:06:27
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
2页 474K
描述
Dual N-Channel MOSFET

SI9926BDY 数据手册

 浏览型号SI9926BDY的Datasheet PDF文件第2页 
SMD Type  
SMD Type  
MOSFET  
Dual N-Channel MOSFET  
SI9926BDY (KI9926BDY)  
SOP-8  
Features  
RDS(on) = 0.027 Ω @ VGS = 4.5 V  
RDS(on) = 0.036 Ω @ VGS = 2.5 V.  
0.15  
1.50  
D
D
2
1
S
D
D
D
D
1
2
3
4
8
7
6
5
1
1
2
2
1
1
2
2
G
G
G
2
S
1
G
S
S
2
1
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
VGS  
ID  
10 sec  
8.2  
Steady State  
6.2  
Unit  
V
20  
Gate-Source Voltage  
±10  
V
Continuous Drain Current  
A
30  
Pulsed Drain Current  
IDM  
A
2.0  
1.3  
1.14  
0.72  
W
Maximum Power Dissipation @TA = 25  
@TA = 70℃  
PD  
W
110  
Thermal Resistance,Junction-to-Ambient  
Jumction temperature and Storage temperature  
RθJA  
/W  
-55 to +150  
Tj.Tstg  
1
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