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PSMN7R6-60BS PDF预览

PSMN7R6-60BS

更新时间: 2024-09-16 11:12:19
品牌 Logo 应用领域
安世 - NEXPERIA 开关脉冲晶体管
页数 文件大小 规格书
14页 965K
描述
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAKProduction

PSMN7R6-60BS 数据手册

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PSMN7R6-60BS  
N-channel 60 V 7.8 mstandard level MOSFET in D2PAK  
Rev. 2 — 2 March 2012  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product  
is designed and qualified for use in a wide range of industrial, communications and  
domestic equipment.  
1.2 Features and benefits  
High efficiency due to low switching  
Suitable for standard level gate drive  
and conduction losses  
sources  
1.3 Applications  
DC-to-DC converters  
Load switching  
Motor control  
Server power supplies  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
60  
Unit  
V
drain-source voltage  
drain current  
Tj 25 °C; Tj 175 °C  
Tmb = 25 °C; VGS = 10 V; see Figure 1  
-
-
-
-
-
ID  
-
92  
A
Ptot  
total power dissipation Tmb = 25 °C; see Figure 2  
junction temperature  
-
149  
175  
W
Tj  
-55  
°C  
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
see Figure 13; see Figure 9  
-
5.9  
7.8  
mΩ  
QGD  
gate-drain charge  
VGS = 10 V; ID = 25 A; VDS = 30 V;  
see Figure 15; see Figure 14  
-
-
10.6  
38.7  
-
-
nC  
nC  
QG(tot)  
total gate charge  
VGS = 10 V; ID = 25 A; VDS = 30 V;  
see Figure 14; see Figure 15  
Avalanche ruggedness  
EDS(AL)S non-repetitive  
VGS = 10 V; Tj(init) = 25 °C; ID = 92 A;  
-
-
110  
mJ  
drain-source  
Vsup 100 V; RGS = 50 ; unclamped  
avalanche energy  

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