Datasheet > PSMN7R6-60PS,127

PSMN7R6-60PS,127

更新时间： 2024-11-06 19:43:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	199K
描述
PSMN7R6-60PS - N-channel 60 V 7.8 mΩ standard level MOSFET TO-220 3-Pin

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中文翻译

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技术参数
数据手册
替代型号

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PSMN7R6-60PS,127 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-220
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	8.56	Base Number Matches：	1

PSMN7R6-60PS,127 数据手册

PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

Rev. 03 — 28 October 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

1.2 Features and benefits

High efficiency due to low switching

Suitable for standard level gate drive

and conduction losses

sources

1.3 Applications

DC-to-DC converters

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

I_D

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

total power dissipation

T_mb= 25 °C; see Figure 2

149

7.8

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C; see Figure 13;

see Figure 9

5.9

mΩ

Dynamic characteristics

Q_GD

gate-drain charge

V_GS= 10 V; I_D= 25 A;

V_DS= 30 V; see Figure 15;

see Figure 14

10.6

Avalanche ruggedness

E_DS(AL)S

non-repetitive

V_GS= 10 V; T_j(init)= 25 °C;

110 mJ

drain-source avalanche I_D= 92 A; V_sup≤ 100 V;

energy R_GS= 50 Ω; unclamped

12 3 4 5 6 7...14

中文翻译

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PSMN7R6-60PS,127 替代型号

型号	品牌	替代类型	描述	数据表
RFP70N06	FAIRCHILD	功能相似	70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs
NDP7060	FAIRCHILD	功能相似	N-Channel Enhancement Mode Field Effect Transistor

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