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PSMN8R5-100PS_15 PDF预览

PSMN8R5-100PS_15

更新时间: 2024-11-07 01:20:15
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
14页 258K
描述
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220

PSMN8R5-100PS_15 数据手册

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PSMN8R5-100PS  
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220  
17 October 2013  
Product data sheet  
1. General description  
Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product  
is designed and qualified for use in a wide range of industrial, communications and  
domestic equipment.  
2. Features and benefits  
High efficiency due to low switching and conduction losses  
Suitable for standard level gate drive sources  
3. Applications  
AC-to-DC power supply equipment  
Motor control  
Server power supplies  
Synchronous rectification  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
100  
100  
263  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
Tj ≥ 25 °C; Tj ≤ 175 °C  
Tj = 25 °C; VGS = 10 V; Fig. 1  
-
-
-
-
-
-
[1]  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 2  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
Fig. 13; Fig. 12  
4.5  
6.4  
8.5  
mΩ  
QGD  
gate-drain charge  
total gate charge  
VGS = 10 V; ID = 25 A; VDS = 50 V;  
Fig. 14; Fig. 15  
-
-
33  
-
-
nC  
nC  
QG(tot)  
111  
Avalanche Ruggedness  
EDS(AL)S non-repetitive drain-  
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;  
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;  
Fig. 3  
-
-
219  
mJ  
source avalanche  
energy  
[1] Continious current limited by package.  
Scan or click this QR code to view the latest information for this product  
 
 
 
 
 

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