Datasheet > PSMN8R5-40MLD

PSMN8R5-40MLD

更新时间： 2024-11-22 11:15:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	295K
描述
N-channel 40 V, 8.5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technologyProduction

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PSMN8R5-40MLD 数据手册

PSMN8R5-40MLD

N-channel 40 V, 8.5 mΩ, logic level MOSFET in LFPAK33

using NextPower-S3 technology

10 February 2020

Product data sheet

1. General description

60 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using

advanced TrenchMOS Superjunction technology. This product has been designed and qualified for

high efficiency applications at high switching frequencies.

2. Features and benefits

•

Avalanche rated, 100% tested

•

NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'

Low Q_RR, Q_Gand Q_GDfor high system efficiency, especially at high switching frequencies

Low spiking and ringing for low EMI designs

High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire

bonds, qualified to 175 °C

•

Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints

Low parasitic inductance and resistance

3. Applications

•

Secondary side synchronous rectification

DC-to-DC converters

Brushless DC motor drive

LED lighting

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

T_j

junction temperature

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

Fig. 10

7.2

8.5

mΩ

V_GS= 4.5 V; I_D= 15 A; T_j= 25 °C;

Fig. 10

Dynamic characteristics

Q_GDgate-drain charge

I_D= 15 A; V_DS= 20 V; V_GS= 4.5 V;

Fig. 12; Fig. 13

0.6

2.1

4.2

12 3 4 5 6 7...12

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