是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G4 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.72 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 97 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 76 A |
最大漏源导通电阻: | 0.008 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MO-235 | JESD-30 代码: | R-PSSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 303 A | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN8R5-60YS,115 | NXP |
获取价格 |
PSMN8R5-60YS - N-channel LFPAK 60 V, 8 mΩ sta | |
PSMN8R7-80BS | NXP |
获取价格 |
90A, 80V, 0.0087ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 | |
PSMN8R7-80BS | NEXPERIA |
获取价格 |
N-channel 80 V 8.7 mΩ standard level MOSFET i | |
PSMN8R7-80BS,118 | NXP |
获取价格 |
PSMN8R7-80BS - N-channel 80 V 8.7 mΩ standard | |
PSMN8R7-80PS | NEXPERIA |
获取价格 |
N-channel 80 V 8.7 mΩ standard level MOSFET i | |
PSMN8R7-80PS | NXP |
获取价格 |
N-channel 80 V 8.7 mΩ standard level MOSFET i | |
PSMN8R7-80PS,127 | NXP |
获取价格 |
PSMN8R7-80PS - N-channel 80 V 8.7 mΩ standard | |
PSMN8R9-100BSE | NEXPERIA |
获取价格 |
N-channel 100 V, 10 mOhm, standard level MOSFET in D2PAKProduction | |
PSMN9R0-25MLC | NXP |
获取价格 |
55A, 25V, 0.0113ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, LFPAK33-4 | |
PSMN9R0-25MLC | NEXPERIA |
获取价格 |
N-channel 25 V 8.65 mΩ logic level MOSFET in |