Datasheet > PSMN8R5-60YS,115

PSMN8R5-60YS,115

更新时间： 2024-09-16 15:48:31

品牌	Logo	应用领域
恩智浦 - NXP		PC 开关脉冲晶体管
页数	文件大小	规格书
15页	227K
描述
PSMN8R5-60YS - N-channel LFPAK 60 V, 8 mΩ standard level MOSFET SOIC 4-Pin

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技术参数
数据手册

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PSMN8R5-60YS,115 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOIC	针数：	4
Reach Compliance Code：	not_compliant	风险等级：	7.99
Is Samacsys：	N	Base Number Matches：	1

PSMN8R5-60YS,115 数据手册

PSMN8R5-60YS

N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

Rev. 01 — 22 December 2009

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

Advanced TrenchMOS provides low

Improved mechanical and thermal

RDSon and low gate charge

characteristics

High efficiency gains in switching

LFPAK provides maximum power

power converters

density in a Power SO8 package

1.3 Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 3

106

175

T_j

junction temperature

-55

°C

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

V_GS= 10 V; T_j(init)= 25 °C;

I_D= 76 A; V_sup≤ 60 V;

R_GS= 50 Ω; unclamped

avalanche energy

Dynamic characteristics

Q_GD

gate-drain charge

V_GS= 10 V; I_D= 60 A;

V_DS= 30 V; see Figure 15 and 14

7.7

Q_G(tot)

total gate charge

V_GS= 10 V; I_D= 60 A;

V_DS= 30 V; see Figure 14 and 15

12 3 4 5 6 7...15

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