Datasheet > PSMN9R5-100BS

PSMN9R5-100BS

更新时间： 2024-09-17 01:19:35

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	232K
描述
N-channel 100 V 9.6 m standard level MOSFET in D2PAK

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PSMN9R5-100BS 数据手册

PSMN9R5-100BS

D2P

N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK

Rev. 2 — 2 March 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

1.3 Applications

 DC-to-DC converters

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; see Figure 1

I_D

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

junction temperature

211

175

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

see Figure 13

8.16

9.6

mΩ

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 60 A; V_DS= 50 V;

see Figure 14;see Figure 15

Q_G(tot)

Avalanche ruggedness

E_DS(AL)Snon-repetitive

V_GS= 10 V; T_j(init)= 25 °C; I_D= 89 A;

177

drain-source

V_sup≤ 100 V; unclamped; R_GS= 50 Ω

avalanche energy

12 3 4 5 6 7...14

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