Datasheet > PSMNR90-40YLH

PSMNR90-40YLH

更新时间： 2024-11-10 11:13:59

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	288K
描述
N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technologyProduction

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中文翻译

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技术参数
数据手册

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PSMNR90-40YLH 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.68	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

PSMNR90-40YLH 数据手册

PSMNR90-40YLH

N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in

LFPAK56E using NextPower-S3 Schottky-Plus technology

26 April 2019

Product data sheet

1. General description

300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E

package using advanced TrenchMOS Superjunction technology. This product has been designed

and qualified for high performance power switching applications.

2. Features and benefits

•

300 A continuous I_D(max)

•

Avalanche rated, 100% tested

NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'

Low Q_RR, Q_Gand Q_GDfor high system efficiency and low EMI designs

Schottky-Plus body-diode, gives soft switching without the associated high I_DSSleakage

Strong linear-mode / SOA rating

Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology

High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to

175 °C

•

Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints for ultimate reliability

Low parasitic inductance and resistance

3. Applications

•

High-performance synchronous rectification

DC-to-DC converters

High performance and high efficiency server power supply

Brushless DC motor control

Battery protection

Load-switch and eFuse

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

300

333

175

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

0.97

0.76

1.2

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

0.94

Dynamic characteristics

12 3 4 5 6 7...12

中文翻译

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与PSMNR90-40YLH相关器件

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