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PSMN8R0-40PS PDF预览

PSMN8R0-40PS

更新时间: 2024-09-17 11:16:03
品牌 Logo 应用领域
安世 - NEXPERIA 局域网PC开关脉冲晶体管
页数 文件大小 规格书
14页 722K
描述
N-channel 40 V 7.6 mΩ standard level MOSFETProduction

PSMN8R0-40PS 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:1.68
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:719533Samacsys Pin Count:3
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:PSMN8R0-40PSSamacsys Released Date:2019-05-17 02:37:07
Is Samacsys:N雪崩能效等级(Eas):43 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):77 A
最大漏源导通电阻:0.0076 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):309 A
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PSMN8R0-40PS 数据手册

 浏览型号PSMN8R0-40PS的Datasheet PDF文件第2页浏览型号PSMN8R0-40PS的Datasheet PDF文件第3页浏览型号PSMN8R0-40PS的Datasheet PDF文件第4页浏览型号PSMN8R0-40PS的Datasheet PDF文件第5页浏览型号PSMN8R0-40PS的Datasheet PDF文件第6页浏览型号PSMN8R0-40PS的Datasheet PDF文件第7页 
PSMN8R0-40PS  
N-channel 40 V 7.6 mstandard level MOSFET  
Rev. 02 — 25 June 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is  
designed and qualified for use in a wide range of industrial, communications and domestic  
equipment.  
1.2 Features and benefits  
„ High efficiency due to low switching  
„ Suitable for standard level gate drive  
and conduction losses  
sources  
1.3 Applications  
„ DC-to-DC convertors  
„ Load switching  
„ Motor control  
„ Server power supplies  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
drain-source voltage Tj 25 °C; Tj 175 °C  
Min  
Typ  
Max Unit  
VDS  
ID  
-
-
-
-
40  
77  
V
A
drain current  
Tmb = 25 °C; VGS = 10 V;  
see Figure 1  
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
-
-
-
86  
-
W
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 25 A;  
VDS = 20 V; see Figure 14;  
see Figure 15  
3.8  
nC  
Static characteristics  
RDSon  
drain-source  
VGS = 10 V; ID = 25 A;  
[1]  
-
6.2  
7.6  
mΩ  
on-state resistance  
Tj = 25 °C; see Figure 13  
[1] Measured 3 mm from package.  

PSMN8R0-40PS 替代型号

型号 品牌 替代类型 描述 数据表
PHP101NQ04T,127 NXP

功能相似

TRANSISTOR 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46,

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