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PSMN7R8-100PSE PDF预览

PSMN7R8-100PSE

更新时间: 2024-11-22 11:10:43
品牌 Logo 应用领域
安世 - NEXPERIA 局域网开关脉冲晶体管
页数 文件大小 规格书
13页 810K
描述
N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 packageProduction

PSMN7R8-100PSE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:not_compliant
风险等级:5.38雪崩能效等级(Eas):315 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0078 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):473 A参考标准:IEC-60134
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PSMN7R8-100PSE 数据手册

 浏览型号PSMN7R8-100PSE的Datasheet PDF文件第2页浏览型号PSMN7R8-100PSE的Datasheet PDF文件第3页浏览型号PSMN7R8-100PSE的Datasheet PDF文件第4页浏览型号PSMN7R8-100PSE的Datasheet PDF文件第5页浏览型号PSMN7R8-100PSE的Datasheet PDF文件第6页浏览型号PSMN7R8-100PSE的Datasheet PDF文件第7页 
PSMN7R8-100PSE  
N-channel 100 V 7.8 mΩ standard level MOSFET with  
improved SOA in TO220 package  
11 August 2014  
Product data sheet  
1. General description  
Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of  
Nexperia "NextPower Live" portfolio, the PSMN7R8-100PSE is robust enough to  
withstand substantial in-rush and fault condition currents during turn on/off, whilst  
offering a low RDS(on) characteristic to keep temperatures down and efficiency up in  
continued use. Ideal for telecommunication systems based on 48 V backplanes / supply  
rails.  
2. Features and benefits  
Enhanced safe operating area (SOA) for superior protection during linear mode  
operation  
Low RDS(on) for low conduction losses  
3. Applications  
Electronic fuse  
Hot-swap / Soft-start  
Uninterruptible power supplies  
Motor control  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
100  
83  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
Tj ≥ 25 °C; Tj ≤ 175 °C  
Tmb = 100 °C; VGS = 10 V; Fig. 2  
-
-
-
-
-
-
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 1  
294  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
Fig. 12  
-
6.7  
7.8  
mΩ  
QGD  
gate-drain charge  
total gate charge  
VGS = 10 V; ID = 25 A; VDS = 50 V;  
Fig. 14; Fig. 15  
-
-
41  
-
-
nC  
nC  
QG(tot)  
128  
 
 
 
 

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