是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | not_compliant |
风险等级: | 5.38 | 雪崩能效等级(Eas): | 315 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 100 A |
最大漏源导通电阻: | 0.0078 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 473 A | 参考标准: | IEC-60134 |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN7R8-120PS | NXP |
获取价格 |
70A, 120V, 0.0079ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3 | |
PSMN7R8-120PSQ | NXP |
获取价格 |
PSMN7R8-120PS MIKEB - N-channel 120V 7.9mΩ st | |
PSMN8R0-30YL | NXP |
获取价格 |
N-channel 8.3 mΩ 30 V TrenchMOS logic level F | |
PSMN8R0-30YL_1105 | NXP |
获取价格 |
N-channel 8.3 mΩ 30 V TrenchMOS logic level F | |
PSMN8R0-30YLC | NXP |
获取价格 |
N-channel 30 V 7.9 mΩ logic level MOSFET in L | |
PSMN8R0-40BS | NEXPERIA |
获取价格 |
N-channel 40 V 7.6 mΩ standard level MOSFET i | |
PSMN8R0-40HL | NEXPERIA |
获取价格 |
N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technologyProduct | |
PSMN8R0-40PS | NXP |
获取价格 |
N-channel 40 V 7.6 mΩ standard level MOSFET | |
PSMN8R0-40PS | NEXPERIA |
获取价格 |
N-channel 40 V 7.6 mΩ standard level MOSFETPr | |
PSMN8R0-80YL | NEXPERIA |
获取价格 |
N-channel 80 V, 8 mΩ logic level MOSFET in LF |