Datasheet > PSMN7R8-120PSQ

PSMN7R8-120PSQ

更新时间： 2024-11-21 21:21:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	262K
描述
PSMN7R8-120PS MIKEB - N-channel 120V 7.9mΩ standard level MOSFET in TO220 TO-220 3-Pin

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技术参数
数据手册

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PSMN7R8-120PSQ 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	TO-220	针数：	3
Reach Compliance Code：	compliant	风险等级：	8.5
Base Number Matches：	1

PSMN7R8-120PSQ 数据手册

PSMN7R8-120PS

N-channel 120V 7.9mΩ standard level MOSFET in TO220

25 January 2013

Product data sheet

1. General description

Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is

designed and qualified for use in a wide range of industrial, communications and power

supply equipment.

2. Features and benefits

High efficiency due to low switching and conduction losses

TO220 package

Suitable for standard level gate drive

•

3. Applications

AC-to-DC power supply

Synchronous rectification

Motor control

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

120

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; Fig. 1

P_tot

total power dissipation T_mb= 25 °C; Fig. 2

349

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 12

4.7

6.72

7.9

mΩ

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 25 A; V_DS= 60 V;

Fig. 14; Fig. 15

50.5

167

Q_G(tot)

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-

V_GS= 10 V; T_j(init)= 25 °C; I_D= 70 A;

V_sup≤ 120 V; unclamped; R_GS= 50 Ω;

Fig. 3

386

source avalanche

energy

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