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PSMN7R6-60PS PDF预览

PSMN7R6-60PS

更新时间: 2024-11-07 11:13:55
品牌 Logo 应用领域
安世 - NEXPERIA 局域网开关脉冲晶体管
页数 文件大小 规格书
14页 810K
描述
N-channel 60 V 7.8 mΩ standard level MOSFETProduction

PSMN7R6-60PS 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.41
雪崩能效等级(Eas):110 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):92 A最大漏源导通电阻:0.0078 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):389 A
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON

PSMN7R6-60PS 数据手册

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PSMN7R6-60PS  
N-channel 60 V 7.8 mstandard level MOSFET  
Rev. 03 — 28 October 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product  
is designed and qualified for use in a wide range of industrial, communications and  
domestic equipment.  
1.2 Features and benefits  
„ High efficiency due to low switching  
„ Suitable for standard level gate drive  
and conduction losses  
sources  
1.3 Applications  
„ DC-to-DC converters  
„ Load switching  
„ Motor control  
„ Server power supplies  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source voltage  
drain current  
Tj 25 °C; Tj 175 °C  
-
-
-
-
60  
92  
V
A
ID  
Tmb = 25 °C; VGS = 10 V;  
see Figure 1  
Ptot  
total power dissipation  
Tmb = 25 °C; see Figure 2  
-
-
-
149  
7.8  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 10 V; ID = 25 A;  
Tj = 25 °C; see Figure 13;  
see Figure 9  
5.9  
mΩ  
Dynamic characteristics  
QGD  
gate-drain charge  
VGS = 10 V; ID = 25 A;  
VDS = 30 V; see Figure 15;  
see Figure 14  
-
-
10.6  
-
nC  
Avalanche ruggedness  
EDS(AL)S  
non-repetitive  
VGS = 10 V; Tj(init) = 25 °C;  
-
110 mJ  
drain-source avalanche ID = 92 A; Vsup 100 V;  
energy RGS = 50 ; unclamped  

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