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NGTB40N60IHLWG PDF预览

NGTB40N60IHLWG

更新时间： 2024-09-13 12:01:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管双极性晶体管栅
页数 文件大小 规格书
10页 184K
描述
Insulated Gate Bipolar Transistor (IGBT)

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中文翻译

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NGTB40N60IHLWG 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：LEAD FREE, CASE 340L-02, 3 PIN针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：5.7
最大集电极电流 (IC)：80 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODEJEDEC-95代码：TO-247
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：230 ns标称接通时间 (ton)：110 ns
Base Number Matches：1

NGTB40N60IHLWG 数据手册

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NGTB40N60IHLWG  
IGBT  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Field Stop (FS) Trench construction, and provides  
superior performance in demanding switching applications, offering  
both low on state voltage and minimal switching loss. The IGBT is  
well suited for half bridge resonant applications. Incorporated into the  
device is a soft and fast co−packaged free wheeling diode with a low  
forward voltage.  
http://onsemi.com  
40 A, 600 V  
Features  
V
E
CEsat = 2.0 V  
off = 0.4 mJ  
• Low Saturation Voltage using Trench with Fieldstop Technology  
• Low Switching Loss Reduces System Power Dissipation  
• Low Gate Charge  
• Soft, Fast Free Wheeling Diode  
• These are Pb−Free Devices  
C
Typical Applications  
• Inductive Heating  
• Soft Switching  
G
E
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
VCES  
IC  
Value  
Unit  
V
Collector−emitter voltage  
600  
Collector current  
@ TC = 25°C  
A
80  
40  
@ TC = 100°C  
G
TO−247  
CASE 340L  
STYLE 4  
Pulsed collector current, T  
ICM  
IF  
200  
A
A
C
pulse  
E
limited by T  
Jmax  
Diode forward current  
@ TC = 25°C  
80  
40  
@ TC = 100°C  
MARKING DIAGRAM  
Diode pulsed current, T  
limited  
IFM  
200  
A
pulse  
by T  
Jmax  
Gate−emitter voltage  
VGE  
PD  
$20  
V
Power Dissipation  
W
@ TC = 25°C  
@ TC = 100°C  
250  
50  
40N60IHL  
AYWWG  
Operating junction temperature  
range  
T
J
−55 to +150  
°C  
Storage temperature range  
T
−55 to +150  
°C  
°C  
stg  
Lead temperature for soldering, 1/8”  
from case for 5 seconds  
T
SLD  
260  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
ORDERING INFORMATION  
Device  
NGTB40N60IHLWG  
Package  
Shipping  
TO−247 30 Units / Rail  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
November, 2012 − Rev. 0  
NGTB40N60IHLW/D  
1234567...10

中文翻译

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NGTB40N60IHLWG 替代型号

型号 品牌 替代类型 描述 数据表
NGTB40N60FLWG ONSEMI

类似代替

 IGBT 600V 40A FS1 太阳能/UPS
NGTG50N60FWG ONSEMI

类似代替

 Insulated Gate Bipolar Transistor (IGBT)
STGW39NC60VD STMICROELECTRONICS

功能相似

 N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT

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