Datasheet > NGTB60N60SWG

NGTB60N60SWG

更新时间： 2023-09-03 20:36:34

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
8页	182K
描述
IGBT

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中文翻译

获取价格

数据手册
替代型号

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NGTB60N60SWG 数据手册

NGTB60N60SWG

IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Field Stop (FS) Trench construction, and provides

superior performance in demanding switching applications, offering

both low on state voltage and minimal switching loss. The IGBT is

well suited for half bridge resonant applications. Incorporated into the

device is a soft and fast co−packaged free wheeling diode with a low

forward voltage.

http://onsemi.com

60 A, 600 V

Features

_CEsat= 2.0 V

• Low Saturation Voltage using Trench with Fieldstop Technology

• Low Switching Loss Reduces System Power Dissipation

• Low Gate Charge

• Soft, Fast Free Wheeling Diode

• These are Pb−Free Devices

E_off= 0.60 mJ

Typical Applications

• Inverter Welding

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

V_CES

I_C

Value

Unit

Collector−emitter voltage

600

Collector current

@ TC = 25°C

120

@ TC = 100°C

Diode forward current

@ TC = 25°C

I_F

120

TO−247

CASE 340L

STYLE 4

@ TC = 100°C

Pulsed collector current, T

I_CM

I_FM

240

pulse

limited by T

Jmax

Diode pulsed current, T

limited

240

pulse

MARKING DIAGRAM

by T

Jmax

Gate−emitter voltage

V_GE

P_D

$20

Power Dissipation

@ TC = 25°C

@ TC = 100°C

298

119

Operating junction temperature range

Storage temperature range

−55 to +150

260

°C

60N60S

AYWWG

stg

Lead temperature for soldering, 1/8″

from case for 5 seconds

SLD

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Assembly Location

= Year

= Work Week

= Pb−Free Package

ORDERING INFORMATION

Device

NGTB60N60SWG

Package

Shipping

TO−247 30 Units / Rail

(Pb−Free)

Publication Order Number:

July, 2014 − Rev. 0

NGTB60N60SW/D

12 3 4 5 6 7 8

中文翻译

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NGTB60N60SWG 替代型号

型号	品牌	替代类型	描述	数据表
NGTB60N65FL2WG	ONSEMI	类似代替	IGBT，650V，60A，场截止 2 IGBT

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