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NGTB75N65FL2WAG

更新时间： 2024-11-06 01:17:43
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
10页 162K
描述
IGBT - Field Stop II / 4 Lead

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NGTB75N65FL2WAG 数据手册

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NGTB75N65FL2WAG  
IGBT - Field Stop II / 4 Lead  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Field Stop II Trench construction, and provides superior  
performance in demanding switching applications, offering both low  
on state voltage and minimal switching loss. In addition, this new  
device is packaged in a TO−247−4L package that provides significant  
www.onsemi.com  
reduction in E Losses compared to standard TO−247−3L package.  
on  
The IGBT is well suited for UPS and solar applications. Incorporated  
into the device is a soft and fast co−packaged free wheeling diode with  
a low forward voltage.  
75 A, 650 V  
VCEsat = 1.70 V  
Features  
Eon = 0.61 mJ  
• Extremely Efficient Trench with Field Stop Technology  
• T  
= 175°C  
Jmax  
C
• Improved Gate Control Lowers Switching Losses  
• Separate Emitter Drive Pin  
• TO−247−4L for Minimal E Losses  
on  
• Optimized for High Speed Switching  
• These are Pb−Free Devices  
G
E1  
Typical Applications  
E
• Solar Inverter  
• Uninterruptible Power Inverter Supplies (UPS)  
• Neutral Point Clamp Topology  
ABSOLUTE MAXIMUM RATINGS  
TO−247  
CASE 340AR  
4 LEAD  
Rating  
Symbol  
Value  
Unit  
V
C
E
E1  
Collector−emitter voltage  
V
CES  
650  
G
Collector current  
@ TC = 25°C  
I
C
A
200  
75  
MARKING DIAGRAM  
@ TC = 100°C  
Diode Forward Current  
@ TC = 25°C  
I
F
A
200  
75  
@ TC = 100°C  
Diode Pulsed Current  
I
200  
A
A
FM  
75N65FL2  
AYWWG  
T
Limited by T Max  
PULSE  
J
Pulsed collector current, T  
I
200  
pulse  
CM  
limited by T  
Jmax  
Gate−emitter voltage  
Transient gate−emitter voltage  
V
GE  
$20  
$30  
V
V
(T = 5 ms, D < 0.10)  
PULSE  
75N65FL2 = Specific Device Code  
Power Dissipation  
P
W
D
A
Y
= Assembly Location  
= Year  
@ TC = 25°C  
@ TC = 100°C  
536  
268  
WW  
G
= Work Week  
= Pb−Free Package  
Operating junction temperature range  
Storage temperature range  
T
−55 to +175  
−55 to +175  
260  
°C  
°C  
°C  
J
T
stg  
Lead temperature for soldering, 1/8″  
from case for 5 seconds  
T
SLD  
ORDERING INFORMATION  
Device  
Package  
Shipping  
30 Units / Rail  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
NGTB75N65FL2WAG  
TO−247  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
May, 2016 − Rev. 0  
NGTB75N65FL2WA/D  
1234567...10

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